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| HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz Typical Applications Features P1dB Output Power: +18.5 dBm Gain: 20 dB Output IP3: +42 dBm Cascadable 50 Ohm I/Os Single Supply: +5V Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC741ST89E is ideal for: * Cellular/3G & WiMAX/4G * Fixed Wireless & WLAN * CATV, Cable Modem & DBS * Microwave Radio & Test Equipment * IF & RF Applications Functional Diagram General Description The HMC741ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18.5 dBm output power. The HMC741ST89E offers 20 dB of gain with a +42 dBm output IP3 at 200 MHz, and can operate directly from a +5V supply. The HMC741ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. Electrical Specifi cations, Vcc = 5V, TA = +25 C Parameter Frequency Range Gain Gain Flatness Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) 16 16 Min. Typ. 0.05 - 1 20 0.3 0.004 16 17 25 18.8 40.5 2.5 96 14 0.01 12 Max. Min. Typ. 0.05 - 3 19 2.6 0.004 12 12 26 16 30 2.5 96 0.01 Max. Units GHz dB dB dB/ C dB dB dB dBm dBm dB mA 9 - 182 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz IF Band Performance Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 5 S21 S11 S22 Gain vs. Temperature 30 25 20 GAIN (dB) 15 10 +25C +85C -40C 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 183 Noise Figure vs. Temperature 8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) +25C +85C -40C Output IP3 vs. Temperature 50 45 40 IP3 (dBm) 35 30 25 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 +25C +85C -40C Output IP3 vs. Vcc 50 45 40 IP3 (dBm) Output IP3 vs. Output Power 50 45 40 35 IP3 (dBm) 4.5V 5.0V 5.5V 30 25 20 15 10 5 100MHz 400MHz 1GHz 35 30 25 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 -5 0 5 Pout (dBm) 10 15 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz Broadband Performance 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Gain & Return Loss 25 20 15 RESPONSE (dB) 10 S21 S11 S22 Gain vs. Temperature 30 25 20 GAIN (dB) 15 10 5 0 +25C +85C -40C 5 0 -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Gain vs. Vcc 25 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C 20 GAIN (dB) 15 4.5V 5.0V 5.5V 10 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 +25C +85C -40C Input Return Loss vs. Vcc 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4.5V 5.0V 5.5V 9 - 184 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz Output Return Loss vs. Vcc 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4.5V 5.0V 5.5V Noise Figure vs. Temperature 8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) +25C +85C -40C 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 185 Noise Figure vs. Vcc 8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 4.5V 5.0V 5.5V Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 +25C +85C -40C Reverse Isolation vs. Vcc 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4.5V 5.0V 5.5V Output IP3 vs. Temperature 50 45 40 35 IP3 (dBm) 30 25 20 15 10 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Output IP3 vs. Vcc 50 45 40 Current vs. Temperature 140 +25C +85C -40C 120 CURRENT (mA) 2.5 3 35 IP3 (dBm) 30 25 20 15 10 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 4.5V 5.0V 5.5V 100 80 60 40 4.5 4.75 5 VOLTAGE (V) 5.25 5.5 P1dB vs. Temperature 20 Psat vs. Temperature 20 15 P1dB (dBm) Psat (dBm) 15 10 +25C +85C -40C 10 +25C +85C -40C 5 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Power Compression @ 500 MHz 25 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 -5 -20 Pout Gain PAE Power Compression @ 2 GHz 25 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 -5 -20 Pout Gain PAE -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 9 - 186 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN) Junction Temperature Continuous Pdiss (T = 85 C) (derate 10.22 mW/C above 85 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HMB) +5.5 Vdc +10 dBm 150 C 0.66 W 97.83 C/W -65 to +150 C -40 to +85 C Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 187 Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC741ST89E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H741 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number Function Description Interface Schematic 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit 9 - 188 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 189 List of Materials for Evaluation PCB 124390 [1] Item J1, J2 J3, J4 C1, C2 C3 C4 C5 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 470 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor Tantalum 820 nH Inductor, 0603 Pkg. HMC741ST89E 119392 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
Price & Availability of HMC741ST89E
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